銳隆光電037-431674玻璃晶圓Glass wafer 矽晶圓Silicon wafer 石英晶圓Quartz wafer
2吋4吋6吋8吋12吋 2Inch 4Inch 6Inch 8Inch 12Inch 晶圓鍍膜 Wafer coating
4"silicon wafer
Diameter:100mm
Thickeness:525±25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:1-10ohm-cm
Flate:32.5±2.5mm
Single side polished
6"silicon wafer
Diameter:150mm
Thickeness:650-700±25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:1-10ohm-cm
Flate:32.5±2.5mm
Single side polished
8"silicon wafer
Diameter:200mm
Thickeness:725+/-25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:1-100ohm-cm
Single side polished
12"silicon wafer
Diameter:300mm
Thickeness:725+/-25um
Type:P
Orientation:<100>
Resistivity:1-100ohm-cm
Double side polished
8"CZ Prime Polished wafer
Diameter:200±1mm
Thickeness:725±20um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:<0.0035ohm-cm
Flate:
Notch Ang:Per SEMI
Notch Dep:Per SEMI
Location:(100)+/-1
Frontside:Mirror Polish
Backside:BSD+LTO
TTV:<10um
Bow/Warp:<90um
Particle:≧0.20um@≦25ppw
8"CZ Prime Polished wafer
Diameter:150±0.5mm
Thickeness:625±25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:<0.004-0.007ohm-cm
Flate:
Second Flat:None
Primary Flat Location:｛110｝± 1°
Primary Flat Length:57.5± 2.5 mm
Frontside:Mirror Polish
Backside:LOT4000-8000A
TTV:< 10um
Bow/Warp:<60um
Particle:≧0.30um@ ≦15ppw
8"CZ Prime Polished wafer
Diameter:150±0.5mm
Thickeness:625±25um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:0.0013-0.0025ohm-cm
Flate:
Second Flat:None
Primary Flat Location:｛110｝± 1°
Primary Flat Length:57.5± 2.5 mm
Frontside:Mirror Polish
Backside:LOT4500-5500A
TTV:<10um
Bow/Warp:<40um
Particle:≧0.30um@≦ 5ppw
8"CZ Prime Polished wafer
Diameter:200±1mm
Thickeness:725±20um
Type/Dopant:P/Boron
Orientation:<100>
Resistivity:0.003-0.005ohm-cm
Flate:
Notch Ang:Per SEMI
Notch Dep:Per SEMI
Location:(100)+/-1
Frontside:Mirror Polish
Backside:BSD+LTO
TTV:<4um
Bow/Warp:<90um
Particle:≧0.20um@ ≦25ppw
